Examination of barrier layers for lead zirconate titanate thin films
Identifieur interne : 000332 ( Main/Exploration ); précédent : 000331; suivant : 000333Examination of barrier layers for lead zirconate titanate thin films
Auteurs : RBID : ISTEX:11664_1992_Article_BF02670926.pdfEnglish descriptors
Abstract
The selection of a suitable electrode and barrier layer are important in the integration of Lead Zirconate Titanate (PZT) into memory circuits. Five materials were evaluated using physical analysis techniques as possible barrier layers. Glancing-angle x-ray diffraction was used as the initial assessment to determine the structure of the PZT. With either silicon or MoSi2 as a base layer, it was not possible to obtain a perovskite PZT structure under the conditions investigated. Although the desired crystal structure could be obtained with TiN as a base material, the oxygen-rich sputtering conditions for PZT had transformed this layer to an oxide making it unsuitable as electrode. PZT grown on an indium tin oxide (ITO) coated glass substrate also had a perovskite structure and good electrical properties. Scanning electron microscopy showed good adhesion between the layers, but transmission electron microscopy and secondary ion mass spectroscopy revealed Pb-rich areas residing in the glass beneath the ITO. PZT on platinum appeared to be the only promising barrier layer studied as there was no indication of Pb diffusion into the underlying layers and the desired crystal structure was obtained.
DOI: 10.1007/BF02670926
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Examination of barrier layers for lead zirconate titanate thin films</title><author><name>Lynnette D. Madsen</name><affiliation wicri:level="1"><mods:affiliation>Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario</wicri:regionArea><wicri:noRegion>Ontario</wicri:noRegion></affiliation><affiliation wicri:level="1"><mods:affiliation>Northern Telecom Electronics Limited (NTEL), Station C, P. O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Northern Telecom Electronics Limited (NTEL), Station C, P. O. Box 3511, K1Y 4H7, Ottawa, Ontario</wicri:regionArea><wicri:noRegion>Ontario</wicri:noRegion></affiliation></author><author><name>Louise Weaver</name><affiliation wicri:level="1"><mods:affiliation>Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario</wicri:regionArea><wicri:noRegion>Ontario</wicri:noRegion></affiliation><affiliation wicri:level="1"><mods:affiliation>Northern Telecom Electronics Limited (NTEL), Station C, P. O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada</mods:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Northern Telecom Electronics Limited (NTEL), Station C, P. O. Box 3511, K1Y 4H7, Ottawa, Ontario</wicri:regionArea><wicri:noRegion>Ontario</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1992_Article_BF02670926.pdf</idno><date when="1992">1992</date><idno type="doi">10.1007/BF02670926</idno><idno type="wicri:Area/Main/Corpus">000D95</idno><idno type="wicri:Area/Main/Curation">000D95</idno><idno type="wicri:Area/Main/Exploration">000332</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier layer</term><term>Ferroelectric</term><term>Lead zirconate titanate</term><term>Perovskite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The selection of a suitable electrode and barrier layer are important in the integration of Lead Zirconate Titanate (PZT) into memory circuits. Five materials were evaluated using physical analysis techniques as possible barrier layers. Glancing-angle x-ray diffraction was used as the initial assessment to determine the structure of the PZT. With either silicon or MoSi2 as a base layer, it was not possible to obtain a perovskite PZT structure under the conditions investigated. Although the desired crystal structure could be obtained with TiN as a base material, the oxygen-rich sputtering conditions for PZT had transformed this layer to an oxide making it unsuitable as electrode. PZT grown on an indium tin oxide (ITO) coated glass substrate also had a perovskite structure and good electrical properties. Scanning electron microscopy showed good adhesion between the layers, but transmission electron microscopy and secondary ion mass spectroscopy revealed Pb-rich areas residing in the glass beneath the ITO. PZT on platinum appeared to be the only promising barrier layer studied as there was no indication of Pb diffusion into the underlying layers and the desired crystal structure was obtained.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="f0a696d4c96e5a78d60bb3070247f627800b0745"><titleInfo lang="eng"><title>Examination of barrier layers for lead zirconate titanate thin films</title></titleInfo><name type="personal"><namePart type="given">Lynnette D.</namePart><namePart type="family">Madsen</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada</affiliation><affiliation>Northern Telecom Electronics Limited (NTEL), Station C, P. O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada</affiliation></name><name type="personal"><namePart type="given">Louise</namePart><namePart type="family">Weaver</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada</affiliation><affiliation>Northern Telecom Electronics Limited (NTEL), Station C, P. O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1991-07-19</dateCreated><dateValid encoding="w3cdtf">2007-07-07</dateValid><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The selection of a suitable electrode and barrier layer are important in the integration of Lead Zirconate Titanate (PZT) into memory circuits. Five materials were evaluated using physical analysis techniques as possible barrier layers. Glancing-angle x-ray diffraction was used as the initial assessment to determine the structure of the PZT. With either silicon or MoSi2 as a base layer, it was not possible to obtain a perovskite PZT structure under the conditions investigated. Although the desired crystal structure could be obtained with TiN as a base material, the oxygen-rich sputtering conditions for PZT had transformed this layer to an oxide making it unsuitable as electrode. PZT grown on an indium tin oxide (ITO) coated glass substrate also had a perovskite structure and good electrical properties. Scanning electron microscopy showed good adhesion between the layers, but transmission electron microscopy and secondary ion mass spectroscopy revealed Pb-rich areas residing in the glass beneath the ITO. PZT on platinum appeared to be the only promising barrier layer studied as there was no indication of Pb diffusion into the underlying layers and the desired crystal structure was obtained.</abstract><subject lang="eng"><genre>Key words:</genre><topic>Lead zirconate titanate</topic><topic>ferroelectric</topic><topic>perovskite</topic><topic>barrier layer</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1992</partNumber><partNumber>Volume: 21</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1992-01-01</dateIssued><copyrightDate encoding="w3cdtf">1992</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 22</identifier><recordInfo><recordOrigin>The Mineral,Metal & Materials Society,Inc., 1992</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02670926</identifier><identifier type="matrixNumber">Art15</identifier><identifier type="local">BF02670926</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>93</start><end>97</end></extent></part><recordInfo><recordOrigin>TMS, 1992</recordOrigin><recordIdentifier>11664_1992_Article_BF02670926.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000332 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000332 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:11664_1992_Article_BF02670926.pdf
|texte= Examination of barrier layers for lead zirconate titanate thin films
}}
| This area was generated with Dilib version V0.5.81. |  |